Battery Review and Tips

DDR-SDRAM: DDR SDRAM (Double Data Rate DRAM) or call SDRAM Ⅱ, the DDR clock rise and fall at the edge can transmit data, so that the actual bandwidth triple that dramatically improves the performance / cost ratio. Comparison of the actual function point of view, derived from the PC133 the second generation of PC266 DDR SRAM (133MHz clock × 2 times the data transfer = 266MHz bandwidth), not only in InQuest latest test report shows the performance of an average of Rambus 24.4%, in Micron’s test, its performance is also superior to other high-bandwidth solution, fully shows that the performance DDR and Rambus sufficient level to compete.
 
Common technical indicators related to memory

Now let’s talk about CASIO NP-40 Battery memory, people are generally concerned about the various technical indicators, the general, including pin number, capacity, speed, parity and so on. Memory usually have 8MB, 16MB, 32MB, 64MB, 128MB, 256MB and other capacity levels, 64MB of which has become the mainstream memory configuration. Memory-chip memory access time is another important indicator of its units to nanoseconds (ns) said. Whether the parity bit memory is often neglected, to ensure parity for the right to read and write data to play a key role, especially during very large amount of data calculation. Some of the standard type of memory has parity bit, some do not; non-standard memory modules have parity.

For SDRAM, we must pass at least three parameters to evaluate its performance is good or bad.

(1) the system clock cycle — He said that the SDRAM can run the maximum frequency. For example: a system clock frequency of the SDRAM 10ns chips, he can run on 100MHz frequencies. Most SDRAM chips can meet this requirement. Obviously, the smaller the number, SDRAM chips can run the higher the frequency. For modern (Hyundai) PC-100 SDRAM, it is inscribed on the -10 chip represents a clock cycle of its operation 10ns, he can run 100MHz FSB. sony np-ft1 battery Product data sheet according to the modern chips that we can know the data access time (the following will be referred to the index) is 6ns.

(2) access time — like EDO / FPM DRAM, he represents the time delay to read data. Most SDRAM chip access time is 6,7,8 or 10ns. But do not be confused, and system clock frequencies. Many people put the access time as a piece of SDRAM chips can run the FSB. For the high-Roth (Goldstar) PC-100 SDRAM, it’s -7 inscribed on the chip represents the access time of 7ns. However, he is still the system clock frequency of 10ns, FSB 100MHz.

(3) CAS (vertical address pulse) response time — CAS latency. Some of the SDRAM can run at CAS Latency (CL) 2 or 3 mode. Read the data that they can be both time delay of two clock cycles can also be a three clock cycles. We can write the performance of SDRAM, EEPROM, so that PC’s BIOS will check the content, and to CL = 2 mode of the faster speed.
However, these three performance indicators are mutually conditioned. In other words, when you have a fast access time, CAS latency you have to sacrifice performance. Therefore, evaluating and comparing the performance of SDRAM, we must be integrated into the above three indicators can not only from the chip, engraved on the -6, -7, -8, or -10 to evaluation.
 
Once the chip maker is also called Dell XPS M1530 battery product PC-100. The chip line with PC-100 standard. NA me -6, -7, -10 is just a symbol. Faster than the -7 -6 does not mean that. Therefore, Samsung (SAMSUNG) to prevent people’s misunderstanding, not to use this data represents the access time, while the access time using the letter said.

Here is a simple example of the performance assessment of SDRAM.

For the 100MHz system for example, a system clock period 10ns. Rough calculation: reading data of the total delay time = CAS Latency delay + access time.

For example: Hyundai PC-100 SDRAM, access time of 8ns, CL2 mode. Therefore, the total delay time = 2 x cycle + access time = 2 x 10 ns + 8 ns = 28 ns
If SDRAM running at CL3 mode, access time is 6ns. Thus, the total time delay = 3 x 10 ns + 6 ns = 36 ns. Obviously, when canon nb-2l battery SDRAM running at CL2 mode, the speed is faster than CL3 mode entirely.

Optional memory

Common market, SDRAM brand Hyundai, Samsung, LG, NEC, Toshiba, Siemens, TI (Texas Instruments) and so on. Purchase should observe the chip surface printing is clear, the number of nominal speed, and origin. Need of special note is the only brand mentioned above refers to memory chips, rather than the entire memory, the memory chip package memory on the circuit board made of the work done by other manufacturers. For example, Kim Shi-Farmington famous American memory only other kodak klic-7002 Battery manufacturers of high quality packaging made of memory chips, it does not manufacture memory chips. So, even with the same brand of memory chips, due to different packaging manufacturer, quality will vary considerably, which can be seen on the circuit board technology. Circuit board, the appearance of the color looks uniform, smooth, burr-free edges and tidy, with six board structure and feel heavier. LGS mainstream HY memory memory has been replaced, although the brand changed, but the thing is still the same, the common model is GM72V66841ET7J, is 8 × 8 particles. I remember a year ago to buy the memory chips model is GM72V66841CT7J, and now the memory is the same. Currently on the market of PC-133 CAS parameters are basically note 3, buy the real parameters for CAS 2 PC133 memory to wait for some time. KINGMAX memory and Jiao Feng) of gold bullion is also a good choice, is the kind of memory is the use of patented HP EliteBook 6930p Battery packaging technology, it will not run into fakes.

Start the system or run the application, the system reported: “error: unable to control A20 line”, “memory write / read failure” or the newspaper: “memory allocation error” and so on, these issues are considered failures of memory error, it reduced the memory out of memory and parity errors are different.

System News “memory error” there are three cases were caused by different reasons. First POST Times “memory error” caused the failure was mainly due to memory or memory controller, OLYMPUS li-42b battery hardware failure; the second is set in CMOS when boot the system is not self-1M or more memory, and running applications program, the system reported “memory error” caused the failure may be due to memory or memory controller, hardware failure, it may be a software failure; Third, by POST to enter DOS or Windows, run the application in reported “memory error” caused the failure was mainly due to software failure.

For the memory failure caused by software errors, and handled according to the following steps to check:

1. If you are running applications under DOS Times “memory error”, the doubt whether a memory allocation error, check the applications running on DOS and whether the conflict and make the appropriate treatment. Generally by restarting the system or re-writing system configuration files to solve the problem of the application can be resolved through the appropriate changes.

2. If you are running applications under Windows environments Times “memory error”, the doubt whether by the application caused the illegal access memory, general CANON NB-5L Battery memory-resident programs can be removed to reduce the active window, adjust the configuration program or reinstall system and application procedures.

3. If the problem only in a particular application is running only appeared, probably caused by the software.

4. Using KILL or KV300 + detection system for viruses, there are anti-virus.

Memory errors caused by hardware failure is more common, CMOS settings wrong, bad memory, combination memory installation error, damaged hardware, memory, the memory controller error Dengjun will be a memory error, the general inspection and treatment according to the following steps:

1. POST is displayed as “memory error”, first enter the CMOS settings, check the CMOS memory on the parameters are set correctly, and whether the configuration of memory in line; for example, if you set read and write cycles of memory or memory memory read and write wait time is less than the actual value, it should increase the memory or increase memory read cycle to read and write latency.

2. If the problem persists, check the memory and the NIKON EN-EL10 Battery memory is good contact between the outlet slot and make the appropriate treatment.

3. If the error persists, check the combination of memory installed is correct. General installation of the motherboard memory sockets are divided into several bodies (Bank), each body has two to four sockets to install memory, memory that can be installed two to four articles. Since the first 72 lines of memory can provide 32-bit valid data (30 lines memory has been eliminated and will not be discussed here), for Pentium class CPU, the data line 64, to one able to access 64-bit data, must install two 72 line memory, so the 586 PC’s motherboard, the general must be an even number of memory installed 72 lines, that one should be installed 2 or 4 of Article 72 lines SIMM memory. If the memory socket on the motherboard is 168 lines, 168 lines of memory as a 64-bit can provide valid data, so only one can be installed properly. Install memory should note the following:

For most PC machines, the Bank is not in the same capacity within the mixed interpolation of different articles with SIMM. Many PC-SIMM can be installed in a different capacity, but packed in the same group all the SIMM Bank article must have the same capacity.

For many PC machines for the different speeds if mixed into the SIMM with the article, even if they are the same capacity, may cause problems. For example, the CASIO np-20 Battery computer has been running at 60ns (nanoseconds) and 16MB of memory, if the free memory slot on the motherboard and then insert the SIMM 70ns speed section, the system will refuse to boot or is likely to start soon after the collapsed . For some computer terms, if the low rate of discharge to the first group of articles SIMM, you can solve the problem of speed of mixing, the computer will be the minimum speed of access.

For most PC machines, it must be a set of all the slots are studded with, or a set of all blank (of course not the first group), in a group can not just plug in the socket part of memory.

PC, the memory size of an acceptable upper limit (the maximum can be found from the PC machine manual. If there is no manual, the only way is to find the maximum value from the practice.)

SDRAM is a new generation of dynamic memory, also known as synchronous dynamic memory or synchronous SAMSUNG bp70a battery DRAM. Although there are many motherboard supports SDRAM and EDO memory mixing installation, but best not to mix. The reason is only 3.3V SDRAM voltage, while the majority of EDO memory will work at 5V supply voltage. While the board were on the DIMM and SIMM supply, but they are always together data line, if the SIMM (72 lines memory) and DIMM (168 lines SDRAM) mix, although the starting system can work, but used for a period of time, may cause SDRAM data input is damaged. Of course, if your SDRAM is suitable for wide-voltage (3V ~ 5V) work products, that no such damage.

4. If the fault has not been resolved, with the substitution check whether the memory is corrupted, and make the appropriate treatment.

5. If the above measures does not work, then suspect a problem with the motherboard or controller chip can be sent to Sony vgp-bps13a/b Battery professional  maintenance.